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Título : Electron-phonon scattering in graded quantum dots
Autor : Diniz, G. S.
Qu, Fanyao
Diniz Neto, Omar de Oliveira
Milla, Augusto Miguel Alcalde
Assunto:: Cálculo
Fóton
Elétrons
Fecha de publicación : jun-2006
Citación : DINIZ, G. S. et al. Electron-phonon scattering in graded quantum dots. Brazilian Journal of Physics, São Paulo, v. 36, n. 2a, p. 372-374, jun. 2006. Disponível em: <http://www.scielo.br/pdf/bjp/v36n2a/a37v362a.pdf>. Acesso em: 13 dez. 2010. doi: 10.1590/S0103-97332006000300037.
Resumen : Theoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAs
DOI: https://dx.doi.org/10.1590/S0103-97332006000300037
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