Skip navigation
Please use this identifier to cite or link to this item: http://repositorio2.unb.br/jspui/handle/10482/25956
Files in This Item:
File SizeFormat 
a03v24n4.pdf136,51 kBAdobe PDFView/Open
Title: Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
Authors: Amato, Angélica Amorim
Issue Date: 2002
Publisher: Sociedade Brasileira de Física
Citation: Rev. Bras. Ensino Fís.,v.24,n.4,p.379-382,2002
Abstract: It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. This result shows the explicit dependence of the transition rate on the phonon density of states and that the absorption curve of a semiconductor is modulated by the phonon structure.
metadata.dc.description.unidade: Em processamento
DOI: https://dx.doi.org/10.1590/S1806-11172002000400003
Appears in Collections:Artigos publicados em periódicos e afins

Show full item record " class="statisticsLink btn btn-primary" href="/jspui/handle/10482/25956/statistics">



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.