| Campo DC | Valor | Idioma |
|---|
| dc.contributor.author | Lima, Fábio Menezes de Souza | - |
| dc.contributor.author | Veloso, Aline Bessa | - |
| dc.contributor.author | Fonseca, Antonio Luciano de Almeida | - |
| dc.contributor.author | Nunes, O. A. C. | - |
| dc.date.accessioned | 2010-12-10T13:01:06Z | - |
| dc.date.available | 2010-12-10T13:01:06Z | - |
| dc.date.issued | 2006-06 | - |
| dc.identifier.citation | LIMA, F. M. S. et al. Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures. Brazilian Journal of Physics, São Paulo, v. 36, n. 2a, p. 365-368, jun. 2006. Disponível em: <http://www.scielo.br/pdf/bjp/v36n2a/a35v362a.pdf>. Acesso em: 01 dez. 2010. doi: http://dx.doi.org/10.1590/S0103-97332006000300035. | en |
| dc.identifier.uri | http://repositorio.unb.br/handle/10482/6153 | - |
| dc.language.iso | Inglês | en |
| dc.rights | Acesso Aberto | en |
| dc.title | Limitation of electron mobility in modulation-doped In0.53Ga0.47As/InP quantum wells at low temperatures | en |
| dc.type | Artigo | en |
| dc.subject.keyword | Elétrons | en |
| dc.subject.keyword | Física quântica | en |
| dc.identifier.doi | http://dx.doi.org/10.1590/S0103-97332006000300035 | en |
| dc.description.abstract1 | The low-temperature electron mobility is investigated here for electrons confined in modulation-doped In0.53Ga0.47As/InP single symmetric quantum wells. The subband structure calculation is developed via variational
method, both Schrodinger and Poisson equations being solved simultaneously with adequate heterointer- ¨
face matching conditions. With this in hands, the main electron scattering rates are computed, namely alloy disorder,
remote ionized impurity, and interface roughness. As a result, interesting interchanges in these scattering
rates were found by varying the well width and the spacer width, which show that some scattering mechanisms can surpass the alloy disorder scattering rate and come to limit the electron mobility, a behavior not reported in the literature. | - |
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